Plumbing the depths: Defect distribution in ion-implanted SiC diodes

Introducing a vertical arrangement of n and p layers into the drift layer of semiconductors to enable bipolar operation is a way around the 'unipolar limit' problem in semiconductors. But defect generation during the fabrication of such devices is a matter of concern. Researchers have examined the depth and distribution of defects formed by aluminum ion implantation in silicon carbide bipolar diodes to identify ways to induce efficient conductivity modulation.

source https://www.sciencedaily.com/releases/2021/11/211118061432.htm